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This is manufactured by onsemi. The manufacturer part number is NGTB50N60S1WG. The maximum collector current includes 100 a. It is assigned with possible HTSUS value of 8541.29.0095. Provide switching energy up to 1.5mj (on), 460µj (off). Features 2v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220 nc gate charge. It has a trr (reverse recovery time) of 94 ns. In addition, it is reach unaffected. Test condition included 400v, 50a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. The maximum power of the product is 417 w. Moreover, it corresponds to ngtb50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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