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This is manufactured by onsemi. The manufacturer part number is HGTG5N120BND. The maximum collector current includes 21 a. It has a trr (reverse recovery time) of 65 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.7v @ 15v, 5a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 22ns/160ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 53 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 450µj (on), 390µj (off). Test condition included 960v, 5a, 25ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 167 w. Moreover, it corresponds to hgtg5n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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