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This is manufactured by onsemi. The manufacturer part number is HGTG10N120BND. The maximum collector current includes 35 a. It has a trr (reverse recovery time) of 70 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 850µj (on), 800µj (off). Features 2.7v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 23ns/165ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 100 nc gate charge. In addition, it is reach unaffected. Test condition included 960v, 10a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. The maximum power of the product is 298 w. Moreover, it corresponds to hgtg10n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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