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This is manufactured by onsemi. The manufacturer part number is HGT1S3N60A4DS9A. The maximum collector current includes 17 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.7v @ 15v, 3a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 6ns/73ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 21 nc gate charge. It has a trr (reverse recovery time) of 29 ns. In addition, it is reach unaffected. Provide switching energy up to 37µj (on), 25µj (off). Test condition included 390v, 3a, 50ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 70 w. Moreover, it corresponds to hgt1s3n60, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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