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This is manufactured by onsemi. The manufacturer part number is HGT1S2N120CN. The maximum collector current includes 13 a. It is assigned with possible HTSUS value of 8541.29.0095. Provide switching energy up to 96µj (on), 355µj (off). Features 2.4v @ 15v, 2.6a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 25ns/205ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. Features 30 nc gate charge. In addition, it is reach unaffected. Test condition included 960v, 2.6a, 51ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-262 is the supplier device package value. The maximum power of the product is 104 w. Moreover, it corresponds to hgt1s2n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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