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This is manufactured by onsemi. The manufacturer part number is HGT1S10N120BNS. The maximum collector current includes 35 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.7v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 23ns/165ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 100 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 320µj (on), 800µj (off). Test condition included 960v, 10a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 298 w. Moreover, it corresponds to hgt1s10, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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