onsemi FGY75T120SQDN

FGY75T120SQDN onsemi
onsemi

Product Information

Typical Gate Charge @ Vgs:
399
Mounting Type:
Through Hole
Channel Mode:
Depletion
Maximum Power Dissipation:
790 W
Maximum Gate Threshold Voltage:
6.5V
Channel Type:
N
Width:
4.82mm
Length:
15.87mm
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Minimum Gate Threshold Voltage:
4.5V
Forward Diode Voltage:
4V
Height:
20.82mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
150 A
Reverse Recovery Time (trr):
99 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
6.25mJ (on), 1.96mJ (off)
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
64ns/332ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3 Variant
Gate Charge:
399 nC
REACH Status:
REACH Unaffected
edacadModel:
FGY75T120SQDN Models
edacadModelUrl:
/en/models/9764740
Test Condition:
600V, 75A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
35 Weeks
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
300 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
790 W
Base Product Number:
FGY75
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FGY75T120SQDN. With a typical gate charge at Vgs includes 399. The product is available in through hole configuration. The product carries depletion channel mode. Provides up to 790 w maximum power dissipation. The product carries 6.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.82mm wide. Its accurate length is 15.87mm. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. Whereas its minimum gate threshold voltage includes 4.5v. Its forward diode voltage is 4v . In addition, the height is 20.82mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 150 a. It has a trr (reverse recovery time) of 99 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 6.25mj (on), 1.96mj (off). Features 1.95v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 64ns/332ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features 399 nc gate charge. In addition, it is reach unaffected. Test condition included 600v, 75a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 35 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 790 w. Moreover, it corresponds to fgy75, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet FGY75T120SQDN(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Assembly/Test Change 03/Mar/2023(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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FGY75T120SQDN(Datasheets)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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