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This is manufactured by onsemi. The manufacturer part number is FGA50N100BNTD2. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.9v @ 15v, 60a. The maximum collector emitter breakdown voltage of the product is 1000 v. Td (on/off) value of 34ns/243ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 257 nc gate charge. It has a trr (reverse recovery time) of 75 ns. In addition, it is reach unaffected. Test condition included 600v, 60a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 156 w. Moreover, it corresponds to fga50n100, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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