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This is manufactured by onsemi. The manufacturer part number is FGA30T65SHD. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 598µj (on), 167µj (off). Features 2.1v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 14.4ns/52.8ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 54.7 nc gate charge. It has a trr (reverse recovery time) of 31.8 ns. In addition, it is reach unaffected. Test condition included 400v, 30a, 6ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3pn is the supplier device package value. The maximum power of the product is 238 w. Moreover, it corresponds to fga30t65, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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