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This is manufactured by onsemi. The manufacturer part number is FGA25N120FTD. The maximum collector current includes 50 a. It has a trr (reverse recovery time) of 770 ns. It is assigned with possible HTSUS value of 8541.29.0095. Features 2v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 48ns/210ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 160 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 340µj (on), 900µj (off). Test condition included 600v, 25a, 15ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 313 w. Moreover, it corresponds to fga25n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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