ON Semiconductor NGTB25N120SWG IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

NGTB25N120SWG ON Semiconductor  IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
onsemi

Product Information

Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
385 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
4420pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50 A
Reverse Recovery Time (trr):
154 ns
HTSUS:
8541.29.0095
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
87ns/179ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
178 nC
REACH Status:
REACH Unaffected
edacadModel:
NGTB25N120SWG Models
Switching Energy:
1.95mJ (on), 600µJ (off)
edacadModelUrl:
/en/models/5267846
Test Condition:
600V, 25A, 10Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
385 W
Base Product Number:
NGTB25
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is ON Semiconductor IGBT 50 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB25N120SWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 385 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 4420pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50 a. It has a trr (reverse recovery time) of 154 ns. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.4v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 87ns/179ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 178 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 1.95mj (on), 600µj (off). Test condition included 600v, 25a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 385 w. Moreover, it corresponds to ngtb25, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Site Addition 09/Feb/2016(PCN Assembly/Origin)
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FPCN20461X 27/nov/2015(PCN Design/Specification)
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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)
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NGTB25N120SWG(Datasheets)

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