onsemi HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247, Through Hole

HGTG18N120BND onsemi  IGBT, 54 A 1200 V, 3-Pin TO-247, Through Hole
HGTG18N120BND
onsemi

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
390 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
54 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
54 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 18A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
23ns/170ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
165 nC
Reverse Recovery Time (trr):
75 ns
title:
HGTG18N120BND
REACH Status:
REACH Unaffected
Switching Energy:
1.9mJ (on), 1.8mJ (off)
Test Condition:
960V, 18A, 3Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
160 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
390 W
Base Product Number:
HGTG18N120
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 54 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is HGTG18N120BND. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 390 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 54 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 54 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.7v @ 15v, 18a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 23ns/170ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 165 nc gate charge. It has a trr (reverse recovery time) of 75 ns. In addition, it is reach unaffected. Provide switching energy up to 1.9mj (on), 1.8mj (off). Test condition included 960v, 18a, 3ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 390 w. Moreover, it corresponds to hgtg18n120, a base product number of the product. The product is designated with the ear99 code number.

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HGTG18N120BN, 1200 V NPT (Non- Punch Through) IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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FFH60UPx/FGH50N3/HGTGx 26/May/2022(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 7/Jul/2021(PCN Obsolescence/ EOL)
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HGTG18N120BND(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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