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This is IGBT 120 A 600 V 3-Pin TO-3P Through Hole manufactured by onsemi. The manufacturer part number is FGA60N60UFDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 298 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 1.81mj (on), 810µj (off). Features 2.4v @ 15v, 60a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 23ns/130ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 188 nc gate charge. It has a trr (reverse recovery time) of 47 ns. In addition, it is reach unaffected. Test condition included 400v, 60a, 5ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. The maximum power of the product is 298 w. Moreover, it corresponds to fga60n60, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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