onsemi NGTB40N120S3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

NGTB40N120S3WG onsemi  IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole
onsemi

Product Information

Dimensions:
16.25 x 5.3 x 21.34mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
454 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
160 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
4912pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Common Emitter
Current - Collector (Ic) (Max):
160 A
Reverse Recovery Time (trr):
163 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
2.2mJ (on), 1.1mJ (off)
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
12ns/145ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
212 nC
REACH Status:
REACH Unaffected
edacadModel:
NGTB40N120S3WG Models
edacadModelUrl:
/en/models/6684812
Test Condition:
600V, 40A, 10Ohm, 15V
Package:
Tube
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
454 W
Base Product Number:
NGTB40
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 160 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB40N120S3WG. The given dimensions of the product include 16.25 x 5.3 x 21.34mm. The product is available in through hole configuration. Provides up to 454 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 160 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 4912pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers common emitter transistor configuration. The maximum collector current includes 160 a. It has a trr (reverse recovery time) of 163 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 2.2mj (on), 1.1mj (off). Features 1.95v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 12ns/145ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 212 nc gate charge. In addition, it is reach unaffected. Test condition included 600v, 40a, 10ohm, 15v. It is shipped in tube package . Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 454 w. Moreover, it corresponds to ngtb40, a base product number of the product. The product is designated with the ear99 code number.

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NGTB40N120S3WG, IGBT - Ultra Field Stop(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab Change 22/May/2020(PCN Assembly/Origin)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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NGTB40N120S3WG(Datasheets)

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