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This is 30 IGBT 80 A 650 V 3-Pin TO-247 manufactured by ON Semiconductor. The manufacturer part number is AFGHL50T65SQD. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 30 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30.0v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. It has typical 11 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt trench field stop 650v 80a 268w through hole to-247-3. Features 2.1v @ 15v, 50a. Td (on/off) value of 20ns/81ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 102nc gate charge. Base Part Number: afghl50. The maximum collector emitter breakdown voltage of the product is 650v. Provide switching energy up to 950µj (on), 460µj (off). Test condition included 400v, 50a, 4.7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product automotive, aec-q101, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 268w.
For more information please check the datasheets.
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