ON Semiconductor AFGHL40T65SQ 30 IGBT, 80 A 650 V, 3-Pin TO-247

ON Semiconductor

Product Information

Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
30
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±30.0V
Package Type:
TO-247
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
49 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 650V 80A 239W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Td (on/off) @ 25°C:
15ns/70ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
68nC
Base Part Number:
AFGHL40
Voltage - Collector Emitter Breakdown (Max):
650V
Switching Energy:
250µJ (on), 90µJ (off)
Test Condition:
400V, 20A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
239W
Customer Reference:
RoHs Compliant
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This is 30 IGBT 80 A 650 V 3-Pin TO-247 manufactured by ON Semiconductor. The manufacturer part number is AFGHL40T65SQ. Provides up to 1 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 30 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30.0v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. It has typical 49 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt trench field stop 650v 80a 239w through hole to-247-3. Features 2.1v @ 15v, 40a. Td (on/off) value of 15ns/70ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 68nc gate charge. Base Part Number: afghl40. The maximum collector emitter breakdown voltage of the product is 650v. Provide switching energy up to 250µj (on), 90µj (off). Test condition included 400v, 20a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product automotive, aec-q101, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 239w.

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Datasheet - AFGHL40T65SQ(Technical Reference)
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AFGHL40T65SQ(Datasheets)

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