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This is manufactured by ON Semiconductor. The manufacturer part number is FGAF30S65AQ. Features 58nc gate charge. Td (on/off) value of 18ns/92ns. It features igbt trench field stop 650v 60a 83w through hole to-3pf-3. It has a trr (reverse recovery time) of 267ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.1v @ 15v, 30a. to-3pf-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 515µj (on), 140µj (off). The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 83w. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. Features an IGBT trench field stop type. Test condition included 400v, 15a, 13ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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