Microsemi Corporation APT80GP60B2G

APT80GP60B2G Microsemi Corporation
APT80GP60B2G
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT PT 600V 100A 1041W Through Hole T-MAX™ [B2]
Mounting Type:
Through Hole
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 80A
Supplier Device Package:
T-MAX™ [B2]
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Power - Max:
1041W
Input Type:
Standard
Package / Case:
TO-247-3 Variant
IGBT Type:
PT
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT80GP60B2G. The maximum collector current includes 100a. It features igbt pt 600v 100a 1041w through hole t-max™ [b2]. The product is available in through hole configuration. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 80a. t-max™ [b2] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. The maximum power of the product is 1041w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. The microsemi corporation's product offers user-desired applications.

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