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This is manufactured by Renesas Electronics America. The manufacturer part number is RJP65T54DPM-E0#T2. Features 72nc gate charge. Td (on/off) value of 35ns/120ns. It features igbt trench 650v 60a 63.5w through hole to-3pf. The product is available in through hole configuration. The maximum collector current includes 60a. Features 1.68v @ 15v, 30a. to-3pf is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 330µj (on), 760µj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 63.5w. It carries standard input type. Moreover, the product comes in to-3pfm, sc-93-3. Features an IGBT trench type. Test condition included 400v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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