Deliver to
United Kingdom
This is manufactured by IXYS. The manufacturer part number is IXG70IF1200NA. The maximum collector current includes 130 a. It is assigned with possible HTSUS value of 0000.00.0000. The maximum collector emitter breakdown voltage of the product is 1200 v. It carries standard input type. Moreover, the product comes in sot-227-4, minibloc. In addition, it is reach unaffected. It is shipped in tube package . Features an IGBT pt type. The product is available in chassis mount configuration. The product x2pt™, xpt™, is a highly preferred choice for users. sot-227b is the supplier device package value. Moreover, it corresponds to ixg70if1200, a base product number of the product.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative IXYS IXG70IF1200NA all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as IXYS IXG70IF1200NA principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET19218199. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
We stock a wide variety of IXYS IXG70IF1200NA that is on-demand, current-edge, and embedded in powerful features IXG70IF1200NA. We are dedicated to helping our customers in all regards IXG70IF1200NA, in the sense to hold their hands and take them through the whole process of choosing the excellent Transistors - IGBTs - Single till the transaction. Enrgtech serves you with free delivery ET19218199, enjoy free next-day delivery 24/7 package tracking, and convenient return IXG70IF1200NA. If you need important information about the IXYS IXG70IF1200NA, feel free to connect us via email at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157.
Basket Total:
£ 0.00