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This is manufactured by Microsemi Power Products Group. The manufacturer part number is APT64GA90LD30. Features 162nc gate charge. Td (on/off) value of 18ns/131ns. It features igbt pt 900v 117a 500w through hole to-264 [l]. The product is available in through hole configuration. The maximum collector current includes 117a. The product power mos 8™, is a highly preferred choice for users. Features 3.1v @ 15v, 38a. to-264 [l] is the supplier device package value. It has typical 29 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 900v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1192µj (on), 1088µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 500w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT pt type. Test condition included 600v, 38a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi power products group's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Power Products Group APT64GA90LD30 all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Power Products Group APT64GA90LD30 principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET18567904. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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