Microsemi Power Products Group APT50GP60BG

APT50GP60BG Microsemi Power Products Group
APT50GP60BG
Microsemi Power Products Group

Product Information

Gate Charge:
165nC
Td (on/off) @ 25°C:
19ns/83ns
Detailed Description:
IGBT PT 600V 100A 625W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
100A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 50A
Supplier Device Package:
TO-247 [B]
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
465µJ (on), 637µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 50A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
190A
Manufacturer:
Microsemi Power Products Group
Checking for live stock

This is manufactured by Microsemi Power Products Group. The manufacturer part number is APT50GP60BG. Features 165nc gate charge. Td (on/off) value of 19ns/83ns. It features igbt pt 600v 100a 625w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 100a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 50a. to-247 [b] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 465µj (on), 637µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 50a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi power products group's product offers user-desired applications.

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