Transistor Type:
NPN
Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
231 W
Maximum Collector Emitter Voltage:
650 V
Maximum Operating Frequency:
1 MHz
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
80 A
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
34 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 650V 80A 231W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 40A
Td (on/off) @ 25°C:
32ns/260ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3 Variant
Gate Charge:
306nC
Base Part Number:
FGHL40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
319ns
Switching Energy:
1.76mJ (on), 362µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
231W
Customer Reference:
