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This is manufactured by ON Semiconductor. The manufacturer part number is FGHL50T65SQ. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 99nc gate charge. Base Part Number: fghl50. It features igbt 650v 100a 268w through hole to-247-3. The maximum collector current includes 100a. Features 2.1v @ 15v, 50a. The product has -55°c ~ 175°c (tj) operating temperature range. It has typical 21 weeks of manufacturer standard lead time. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 410µj (on), 88µj (off). Td (on/off) value of 19ns/93ns. The maximum power of the product is 268w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 650v. Test condition included 400v, 25a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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