Typical Gate Charge @ Vgs:
399
Mounting Type:
Through Hole
Channel Mode:
Depletion
Maximum Power Dissipation:
790 W
Maximum Gate Threshold Voltage:
6.5V
Channel Type:
N
Width:
4.82mm
Length:
15.87mm
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Minimum Gate Threshold Voltage:
4.5V
Forward Diode Voltage:
4V
Height:
20.82mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
32 Weeks
Current - Collector (Ic) (Max):
150A
Detailed Description:
IGBT Field Stop 1200V 150A 790W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 75A
Td (on/off) @ 25°C:
64ns/332ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
399nC
Base Part Number:
FGY75
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
99ns
Switching Energy:
6.25mJ (on), 1.96mJ (off)
Test Condition:
600V, 75A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
300A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
790W
Customer Reference:
