Automotive Standard:
AEC-Q101
Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
238 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2495pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
22.3µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Td (on/off) @ 25°C:
17.6ns/75.2ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
76nC
Base Part Number:
AFGB40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
131ns
Switching Energy:
858µJ (on), 229µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
D²PAK-3 (TO-263-3)
Packaging:
Cut Tape (CT)
Power - Max:
238W
Customer Reference: