Automotive Standard:
AEC-Q101
Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
238 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2495pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
22.3µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Td (on/off) @ 25°C:
17.6ns/75.2ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
76nC
Base Part Number:
AFGB40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
131ns
Switching Energy:
858µJ (on), 229µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
D²PAK-3 (TO-263-3)
Packaging:
Cut Tape (CT)
Power - Max:
238W
Customer Reference:
This is manufactured by ON Semiconductor. The manufacturer part number is AFGB40T65SQDN. The product complies with automotive standard - aec-q101. The given dimensions of the product include 10.67 x 9.65 x 4.58mm. The product is available in surface mount configuration. Provides up to 238 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 2495pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 22.3µj energy rating . The product offers single transistor configuration. It has typical 19 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt 650v 80a 238w surface mount d²pak-3 (to-263-3). Features 2.1v @ 15v, 40a. Td (on/off) value of 17.6ns/75.2ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features 76nc gate charge. Base Part Number: afgb40. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 131ns. Provide switching energy up to 858µj (on), 229µj (off). Test condition included 400v, 40a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product automotive, aec-q101, is a highly preferred choice for users. d²pak-3 (to-263-3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 238w.
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