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This is manufactured by ON Semiconductor. The manufacturer part number is FGY60T120SQDN. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 517 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . It has approximately 7147pf gate capacitance . The product has a maximum 120 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 311nc gate charge. Base Part Number: fgy60. It features igbt 1200v 120a 517w through hole to-247-3. The maximum collector current includes 120a. Features 1.95v @ 15v, 60a. The product has -55°c ~ 175°c (tj) operating temperature range. It has typical 52 weeks of manufacturer standard lead time. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 52ns/296ns. The maximum power of the product is 517w. It carries standard input type. Moreover, the product comes in to-247-3 variant. The maximum collector emitter breakdown voltage of the product is 1200v. Test condition included 600v, 60a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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