Dimensions:
15.7 x 5.7 x 24.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
94 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2590pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
325µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 650V 80A 94W Through Hole TO-3PF-3
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Td (on/off) @ 25°C:
17.8ns/81.6ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Gate Charge:
75nC
Base Part Number:
FGAF40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
274ns
Switching Energy:
132µJ (on), 62µJ (off)
Test Condition:
400V, 10A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PF-3
Packaging:
Tube
Power - Max:
94W
Customer Reference:
