Microsemi Corporation APT11GP60BDQBG
Product Information
Gate Charge:
40nC
Td (on/off) @ 25°C:
7ns/29ns
Detailed Description:
IGBT PT 600V 41A 187W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
41A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 11A
Supplier Device Package:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
46µJ (on), 90µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
187W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 11A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
45A
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with APT11GP60BDQBG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APT11GP60BDQBG. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APT11GP60BDQBG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16025037 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16025037.
Yes. We ship APT11GP60BDQBG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT11GP60BDQBG. Features 40nc gate charge. Td (on/off) value of 7ns/29ns. It features igbt pt 600v 41a 187w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 41a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 11a. to-247-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 46µj (on), 90µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 187w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 11a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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