Microsemi Corporation APT102GA60B2

APT102GA60B2 Microsemi Corporation
Microsemi Corporation

Product Information

Gate Charge:
294nC
Td (on/off) @ 25°C:
28ns/212ns
Detailed Description:
IGBT PT 600V 183A 780W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
183A
Series:
POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 62A
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
1.354mJ (on), 1.614mJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
780W
Input Type:
Standard
Package / Case:
TO-247-3 Variant
IGBT Type:
PT
Test Condition:
400V, 62A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
307A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT102GA60B2. Features 294nc gate charge. Td (on/off) value of 28ns/212ns. It features igbt pt 600v 183a 780w through hole. The product is available in through hole configuration. The maximum collector current includes 183a. The product power mos 8™, is a highly preferred choice for users. Features 2.5v @ 15v, 62a. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.354mj (on), 1.614mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 780w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. Test condition included 400v, 62a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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