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Infineon Technologies IRG8B08N120KDPBF

IRG8B08N120KDPBF Infineon Technologies
Infineon Technologies

Product Information

Gate Charge:
45nC
Td (on/off) @ 25°C:
20ns/160ns
Detailed Description:
IGBT 1200V 15A 89W Through Hole TO-220AB
Reverse Recovery Time (trr):
50ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
15A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 5A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
300µJ (on), 300µJ (off)
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
89W
Input Type:
Standard
Package / Case:
TO-220-3
Test Condition:
600V, 5A, 47Ohm, 15V
Current - Collector Pulsed (Icm):
15A
Manufacturer:
Infineon Technologies
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This is manufactured by Infineon Technologies. The manufacturer part number is IRG8B08N120KDPBF. Features 45nc gate charge. Td (on/off) value of 20ns/160ns. It features igbt 1200v 15a 89w through hole to-220ab. It has a trr (reverse recovery time) of 50ns. The product is available in through hole configuration. The maximum collector current includes 15a. Features 2v @ 15v, 5a. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 300µj (on), 300µj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 89w. It carries standard input type. Moreover, the product comes in to-220-3. Test condition included 600v, 5a, 47ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The infineon technologies's product offers user-desired applications.

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Mult Device EOL 30/Mar/2016(PCN Obsolescence/ EOL)
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Mult Device EOL REV 11/Apr/2016(PCN Obsolescence/ EOL)
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IRG8x08N120KD(Datasheets)
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Part Number Guide(Other Related Documents)
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Package Drawing Update 19/Aug/2015(PCN Packaging)

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