Renesas Electronics America RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0-T2 Renesas Electronics America RJP65T43DPQ-A0#T2
Renesas Electronics America

Product Information

Gate Charge:
69nC
Td (on/off) @ 25°C:
35ns/105ns
Detailed Description:
IGBT Trench 650V 60A 150W Through Hole TO-247A
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 20A
Supplier Device Package:
TO-247A
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Tube
Switching Energy:
170µJ (on), 130µJ (off)
Operating Temperature:
175°C (TJ)
Power - Max:
150W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench
Test Condition:
400V, 20A, 10Ohm, 15V
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJP65T43DPQ-A0#T2. Features 69nc gate charge. Td (on/off) value of 35ns/105ns. It features igbt trench 650v 60a 150w through hole to-247a. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.4v @ 15v, 20a. to-247a is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 170µj (on), 130µj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 150w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench type. Test condition included 400v, 20a, 10ohm, 15v. The renesas electronics america's product offers user-desired applications.

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RJP65T43DPQ-A0(Datasheets)

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