Renesas Electronics America RJH65T47DPQ-A0#T0

RJH65T47DPQ-A0-T0 Renesas Electronics America RJH65T47DPQ-A0#T0
Renesas Electronics America

Product Information

Gate Charge:
127nC
Td (on/off) @ 25°C:
45ns/190ns
Detailed Description:
IGBT Trench 650V 90A 375W Through Hole TO-247A
Reverse Recovery Time (trr):
100ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
90A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 45A
Supplier Device Package:
TO-247A
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Tube
Switching Energy:
520µJ (on), 560µJ (off)
Operating Temperature:
175°C (TJ)
Power - Max:
375W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench
Test Condition:
400V, 45A, 10Ohm, 15V
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH65T47DPQ-A0#T0. Features 127nc gate charge. Td (on/off) value of 45ns/190ns. It features igbt trench 650v 90a 375w through hole to-247a. It has a trr (reverse recovery time) of 100ns. The product is available in through hole configuration. The maximum collector current includes 90a. Features 2.4v @ 15v, 45a. to-247a is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 520µj (on), 560µj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 375w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench type. Test condition included 400v, 45a, 10ohm, 15v. The renesas electronics america's product offers user-desired applications.

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RJH65T47DPQ-A0(Datasheets)

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