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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH65D27BDPQ-A0#T2. Features 175nc gate charge. Td (on/off) value of 20ns/165ns. It features igbt trench 650v 100a 375w through hole to-247a. It has a trr (reverse recovery time) of 80ns. The product is available in through hole configuration. The maximum collector current includes 100a. Features 1.65v @ 15v, 50a. to-247a is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1mj (on), 1.5mj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 375w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench type. Test condition included 400v, 50a, 10ohm, 15v. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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