Toshiba Semiconductor and Storage GT8G133(TE12L,Q)

GT8G133-TE12L-Q- Toshiba Semiconductor and Storage GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.21.0095
Vce(on) (Max) @ Vge, Ic:
2.9V @ 4V, 150A
Td (on/off) @ 25°C:
1.7µs/2µs
Operating Temperature:
150°C (TJ)
Input Type:
Standard
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Voltage - Collector Emitter Breakdown (Max):
400 V
Switching Energy:
-
Test Condition:
-
Manufacturer:
Toshiba Semiconductor and Storage
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
-
Current - Collector Pulsed (Icm):
150 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-TSSOP
Packaging:
Tape & Reel (TR)
Power - Max:
600 mW
Base Product Number:
GT8G133
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT8G133(TE12L,Q). It is assigned with possible HTSUS value of 8541.21.0095. Features 2.9v @ 4v, 150a. Td (on/off) value of 1.7µs/2µs. The product has 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in 8-tssop (0.173", 4.40mm width). The maximum collector emitter breakdown voltage of the product is 400 v. The toshiba semiconductor and storage's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. 8-tssop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 600 mw. Moreover, it corresponds to gt8g133, a base product number of the product. The product is designated with the ear99 code number.

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GT8G133(Datasheets)

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