Toshiba Semiconductor and Storage GT10J312(Q)

GT10J312-Q- Toshiba Semiconductor and Storage GT10J312(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
Switching Energy:
-
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Td (on/off) @ 25°C:
400ns/400ns
Operating Temperature:
150°C (TJ)
Input Type:
Standard
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Reverse Recovery Time (trr):
200 ns
Voltage - Collector Emitter Breakdown (Max):
600 V
Test Condition:
300V, 10A, 100Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
-
Current - Collector Pulsed (Icm):
20 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
-
Power - Max:
60 W
Base Product Number:
GT10J312
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT10J312(Q). The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.7v @ 15v, 10a. Td (on/off) value of 400ns/400ns. The product has 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a trr (reverse recovery time) of 200 ns. The maximum collector emitter breakdown voltage of the product is 600 v. Test condition included 300v, 10a, 100ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The maximum power of the product is 60 w. Moreover, it corresponds to gt10j312, a base product number of the product. The product is designated with the ear99 code number.

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GT10J312(Datasheets)

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