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ON Semiconductor SGS5N60RUFDTU

SGS5N60RUFDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
16nC
Base Part Number:
SGS5N
Detailed Description:
IGBT 600V 8A 35W Through Hole TO-220F
Reverse Recovery Time (trr):
55ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
8A
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 5A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220F
Packaging:
Tube
Switching Energy:
88µJ (on), 107µJ (off)
Td (on/off) @ 25°C:
13ns/34ns
Power - Max:
35W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 5A, 40Ohm, 15V
Current - Collector Pulsed (Icm):
15A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGS5N60RUFDTU. Features 16nc gate charge. Base Part Number: sgs5n. It features igbt 600v 8a 35w through hole to-220f. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 8a. Features 2.8v @ 15v, 5a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 88µj (on), 107µj (off). Td (on/off) value of 13ns/34ns. The maximum power of the product is 35w. It carries standard input type. Moreover, the product comes in to-220-3 full pack. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 5a, 40ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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SGS5N60RUFD(Datasheets)

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