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ON Semiconductor SGP13N60UFDTU

SGP13N60UFDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
25nC
Base Part Number:
SGP13N60
Detailed Description:
IGBT 600V 13A 60W Through Hole TO-220-3
Reverse Recovery Time (trr):
55ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
13A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 6.5A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220-3
Packaging:
Tube
Switching Energy:
85µJ (on), 95µJ (off)
Td (on/off) @ 25°C:
20ns/70ns
Power - Max:
60W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 6.5A, 50Ohm, 15V
Current - Collector Pulsed (Icm):
52A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGP13N60UFDTU. Features 25nc gate charge. Base Part Number: sgp13n60. It features igbt 600v 13a 60w through hole to-220-3. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 13a. Features 2.6v @ 15v, 6.5a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 85µj (on), 95µj (off). Td (on/off) value of 20ns/70ns. The maximum power of the product is 60w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 6.5a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Logo 17/Aug/2017(PCN Design/Specification)
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TO220B03 Pkg Drawing(Datasheets)
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SGP13N60UFD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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