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ON Semiconductor SGH80N60UFTU

SGH80N60UFTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
175nC
Base Part Number:
SGH80
Detailed Description:
IGBT 600V 80A 195W Through Hole TO-3P
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
80A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 40A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3P
Packaging:
Tube
Switching Energy:
570µJ (on), 590µJ (off)
Td (on/off) @ 25°C:
23ns/90ns
Power - Max:
195W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 40A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
220A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGH80N60UFTU. Features 175nc gate charge. Base Part Number: sgh80. It features igbt 600v 80a 195w through hole to-3p. The product is available in through hole configuration. The maximum collector current includes 80a. Features 2.6v @ 15v, 40a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 570µj (on), 590µj (off). Td (on/off) value of 23ns/90ns. The maximum power of the product is 195w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 40a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Multiple Devices 27/Feb/2012(PCN Obsolescence/ EOL)
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SGH80N60UF(Datasheets)

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Related Manufacturers: ON Semiconductor ROHM Semiconductor IXYS onsemi WeEn Semiconductors International Rectifier Renesas Electronics America Inc. Fairchild Semiconductor Infineon Technologies Diodes Incorporated
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