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ON Semiconductor SGH30N60RUFTU

SGH30N60RUFTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
85nC
Base Part Number:
SGH30
Detailed Description:
IGBT 600V 48A 235W Through Hole TO-3PN
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
48A
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 30A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3PN
Packaging:
Tube
Switching Energy:
919µJ (on), 814µJ (off)
Td (on/off) @ 25°C:
30ns/54ns
Power - Max:
235W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 30A, 7Ohm, 15V
Current - Collector Pulsed (Icm):
90A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGH30N60RUFTU. Features 85nc gate charge. Base Part Number: sgh30. It features igbt 600v 48a 235w through hole to-3pn. The product is available in through hole configuration. The maximum collector current includes 48a. Features 2.8v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 919µj (on), 814µj (off). Td (on/off) value of 30ns/54ns. The maximum power of the product is 235w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 30a, 7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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SGH30N60RUF(Datasheets)

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