ON Semiconductor SGH10N60RUFDTU

SGH10N60RUFDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
30nC
Base Part Number:
SGH10N60
Detailed Description:
IGBT 600V 16A 75W Through Hole TO-3PN
Reverse Recovery Time (trr):
60ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
16A
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 10A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3PN
Packaging:
Tube
Switching Energy:
141µJ (on), 215µJ (off)
Td (on/off) @ 25°C:
15ns/36ns
Power - Max:
75W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 10A, 20Ohm, 15V
Current - Collector Pulsed (Icm):
30A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGH10N60RUFDTU. Features 30nc gate charge. Base Part Number: sgh10n60. It features igbt 600v 16a 75w through hole to-3pn. It has a trr (reverse recovery time) of 60ns. The product is available in through hole configuration. The maximum collector current includes 16a. Features 2.8v @ 15v, 10a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 141µj (on), 215µj (off). Td (on/off) value of 15ns/36ns. The maximum power of the product is 75w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 10a, 20ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mold compound change 17/Sep/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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SGH10N60RUFD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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