ON Semiconductor SGF80N60UFTU

SGF80N60UFTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
175nC
Base Part Number:
SGF80N60
Detailed Description:
IGBT 600V 80A 110W Through Hole TO-3PF
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
80A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 40A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3PF
Packaging:
Tube
Switching Energy:
570µJ (on), 590µJ (off)
Td (on/off) @ 25°C:
23ns/90ns
Power - Max:
110W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 40A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
220A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SGF80N60UFTU. Features 175nc gate charge. Base Part Number: sgf80n60. It features igbt 600v 80a 110w through hole to-3pf. The product is available in through hole configuration. The maximum collector current includes 80a. Features 2.6v @ 15v, 40a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 570µj (on), 590µj (off). Td (on/off) value of 23ns/90ns. The maximum power of the product is 110w. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 40a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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SGF80N60UF(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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