ON Semiconductor NGTB75N65FL2WAG

ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
200A
Detailed Description:
IGBT Field Stop 650V 200A 536W Through Hole TO-247-4L
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 75A
Td (on/off) @ 25°C:
23ns/157ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-4
Gate Charge:
310nC
Base Part Number:
NGTB75
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
90ns
Switching Energy:
610µJ (on), 1.2mJ (off)
Test Condition:
400V, 75A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Power - Max:
536W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB75N65FL2WAG. The maximum collector current includes 200a. It features igbt field stop 650v 200a 536w through hole to-247-4l. Features 2v @ 15v, 75a. Td (on/off) value of 23ns/157ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-4. Features 310nc gate charge. Base Part Number: ngtb75. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 90ns. Provide switching energy up to 610µj (on), 1.2mj (off). Test condition included 400v, 75a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 536w.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)
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NGTB75N65FL2WAG(Datasheets)

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