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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N65S1WG. The maximum collector current includes 140a. It features igbt trench 650v 140a 300w through hole to-247. Features 2.45v @ 15v, 50a. Td (on/off) value of 75ns/128ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 128nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 70ns. Provide switching energy up to 1.25mj (on), 530µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 300w.
For more information please check the datasheets.
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