ON Semiconductor NGTB40N120FL2WAG

NGTB40N120FL2WAG ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
160A
Detailed Description:
IGBT Field Stop 1200V 160A 536W Through Hole TO-247-4L
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Td (on/off) @ 25°C:
30ns/145ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-4
Gate Charge:
313nC
Base Part Number:
NGTB40
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
240ns
Switching Energy:
1.7mJ (on), 1.1mJ (off)
Test Condition:
600V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Power - Max:
536W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB40N120FL2WAG. The maximum collector current includes 160a. It features igbt field stop 1200v 160a 536w through hole to-247-4l. Features 2.4v @ 15v, 40a. Td (on/off) value of 30ns/145ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-4. Features 313nc gate charge. Base Part Number: ngtb40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 240ns. Provide switching energy up to 1.7mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 536w.

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Wafer Fab Change 22/May/2020(PCN Assembly/Origin)
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NGTB40N120FL2WAG(Datasheets)
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Mult Dev EOL 09/Oct/2020(PCN Obsolescence/ EOL)

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