ON Semiconductor NGTB25N120FL2WAG

ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Field Stop 1200V 100A 385W Through Hole TO-247-4L
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 25A
Td (on/off) @ 25°C:
17ns/113ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-4
Gate Charge:
181nC
Base Part Number:
NGTB25
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
136ns
Switching Energy:
990µJ (on), 660µJ (off)
Test Condition:
600V, 50A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
100A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Power - Max:
385W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120FL2WAG. The maximum collector current includes 100a. It features igbt field stop 1200v 100a 385w through hole to-247-4l. Features 2.4v @ 15v, 25a. Td (on/off) value of 17ns/113ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-4. Features 181nc gate charge. Base Part Number: ngtb25. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 136ns. Provide switching energy up to 990µj (on), 660µj (off). Test condition included 600v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 385w.

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Mult Devices 31/Jan/2019(PCN Obsolescence/ EOL)
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NGTB25N120FL2WAG(Datasheets)

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