ON Semiconductor HGTP7N60C3D

HGTP7N60C3D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
23nC
Base Part Number:
HGTP7N60
Detailed Description:
IGBT 600V 14A 60W Through Hole TO-220-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
14A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 7A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
165µJ (on), 600µJ (off)
Power - Max:
60W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Test Condition:
480V, 7A, 50Ohm, 15V
Current - Collector Pulsed (Icm):
56A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTP7N60C3D. Features 23nc gate charge. Base Part Number: hgtp7n60. It features igbt 600v 14a 60w through hole to-220-3. The product is available in through hole configuration. The maximum collector current includes 14a. Features 2v @ 15v, 7a. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 165µj (on), 600µj (off). The maximum power of the product is 60w. It carries standard input type. Moreover, the product comes in to-220-3. Test condition included 480v, 7a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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TO220B03 Pkg Drawing(Datasheets)
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HGTP7N60C3D, HGT1S7N60C3D/S(Datasheets)

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