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This is manufactured by ON Semiconductor. The manufacturer part number is HGTP5N120BND. The maximum collector current includes 21a. It features igbt npt 1200v 21a 167w through hole to-220-3. Features 2.7v @ 15v, 5a. Td (on/off) value of 22ns/160ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 53nc gate charge. Base Part Number: hgtp5n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 65ns. Provide switching energy up to 450µj (on), 390µj (off). Test condition included 960v, 5a, 25ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 167w.
For more information please check the datasheets.
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