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ON Semiconductor HGTP12N60A4D

HGTP12N60A4D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
78nC
Base Part Number:
HGTP12N60
Detailed Description:
IGBT 600V 54A 167W Through Hole TO-220-3
Reverse Recovery Time (trr):
30ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
54A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 12A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220-3
Packaging:
Tube
Switching Energy:
55µJ (on), 50µJ (off)
Td (on/off) @ 25°C:
17ns/96ns
Power - Max:
167W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 12A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
96A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTP12N60A4D. Features 78nc gate charge. Base Part Number: hgtp12n60. It features igbt 600v 54a 167w through hole to-220-3. It has a trr (reverse recovery time) of 30ns. The product is available in through hole configuration. The maximum collector current includes 54a. Features 2.7v @ 15v, 12a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 55µj (on), 50µj (off). Td (on/off) value of 17ns/96ns. The maximum power of the product is 167w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 12a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Mold Chg 28/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Discover our top brands and the latest innovation in supplying electrical and electronic innovative ON Semiconductor HGTP12N60A4D all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as ON Semiconductor HGTP12N60A4D principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET14525197. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.

We stock a wide variety of ON Semiconductor HGTP12N60A4D that is on-demand, current-edge, and embedded in powerful features HGTP12N60A4D.  We are dedicated to helping our customers in all regards HGTP12N60A4D, in the sense to hold their hands and take them through the whole process of choosing the excellent Transistors - IGBTs - Single till the transaction. Enrgtech serves you with free delivery ET14525197, enjoy free next-day delivery 24/7 package tracking, and convenient return HGTP12N60A4D. If you need important information about the ON Semiconductor HGTP12N60A4D, feel free to connect us via email at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157.

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Related Manufacturers: ON Semiconductor ROHM Semiconductor IXYS onsemi WeEn Semiconductors International Rectifier Renesas Electronics America Inc. Fairchild Semiconductor Infineon Technologies Diodes Incorporated
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