ON Semiconductor HGTG40N60B3

HGTG40N60B3 ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
250nC
Base Part Number:
HGTG40N60
Detailed Description:
IGBT 600V 70A 290W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
70A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 40A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
1.05mJ (on), 800µJ (off)
Td (on/off) @ 25°C:
47ns/170ns
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
480V, 40A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
330A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG40N60B3. Features 250nc gate charge. Base Part Number: hgtg40n60. It features igbt 600v 70a 290w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 70a. Features 2v @ 15v, 40a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.05mj (on), 800µj (off). Td (on/off) value of 47ns/170ns. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 40a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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HGTG40N60B3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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